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Improvement of Hydride Characteristics in Hydrogen Storage La-Ni Based Alloy
Hiroshi Abe*, Syun Ohnuki, Yoshiaki Shinohara, Kadek Fendy Sutrisna, Michiaki Utsumi, Yoshihito Matsumura, and Takeshi Ohshima
poster presentation: Tuesday 2010-08-24 05:00 PM - 07:00 PM in section Modification of semiconductors, metals and ceramics
Last modified: 2010-06-02
Abstract
Recently, Ni-MH batteries with hydrogen storage La-Ni based alloys as negative electrodes are installed many hybrid cars (HV: Hybrid Vehicle). In such metal alloys, AB5 type metal alloys have been already used as practical materials because of their high response. We aimed to improve the rate of hydrogen absorption, and effectively induced defects such as vacancies, dislocations, micro-cracks or added atoms into the surface region of the metal alloy to trap hydrogen atoms [1, 2]. In this study, we investigate the effects of ion irradiation on the electrochemical hydriding rate of the alkaline pretreatment La-Ni based alloys. We also analyzed the chemical compositions at the surface of the irradiated/un-irradiated La-Ni based alloys, their crystal structures, and the phases of bulk.
The samples used in this study were LaNi4.6Al0.4 alloy. The samples were irradiated with Potassium ions (K+) at an acceleration energy of 350 keV with a dose of 1E16 cm-2 using the 400 kV ion implanter, at the TIARA, JAEA. The hydrogen absorption rate measurements were also performed for the irradiated sample and un-irradiated sample using the electrochemical apparatus method. The chemical compositions in the surface of the irradiated samples were analyzed by scanning electron microscopy equipped with energy dispersive spectroscopy. X-ray Photoelectron spectra of the samples indicate that composition of oxide layer was varied on irradiated conditions.
These results suggest that improvement of hydrogen absorption rate for LaNi4.6Al0.4 surface is caused by formation of conductive oxide layer by ion beam irradiations [3]. The ion beam irradiation was found as an effective way to enhance the rate of the initial activation of the hydrogen absorption of La-Ni based alloy.
[1] H. Abe, H. Uchida, Y. Azuma, A. Uedono, Z. Q. Chen and H. Itoh, Nucl. Inst. and Meth B, 206 (2003) p. 224.
[2] H. Abe, R. Morimoto, F. Satoh, Y. Azuma and H. Uchida, J. Alloys Comp., 404-406 (2005) p. 288.
[3] H. H. Uchida, Y. Watanabe, Y. Matsumura and H. Uchida, J. Alloys Comp., 231 (1995) p. 679.
The samples used in this study were LaNi4.6Al0.4 alloy. The samples were irradiated with Potassium ions (K+) at an acceleration energy of 350 keV with a dose of 1E16 cm-2 using the 400 kV ion implanter, at the TIARA, JAEA. The hydrogen absorption rate measurements were also performed for the irradiated sample and un-irradiated sample using the electrochemical apparatus method. The chemical compositions in the surface of the irradiated samples were analyzed by scanning electron microscopy equipped with energy dispersive spectroscopy. X-ray Photoelectron spectra of the samples indicate that composition of oxide layer was varied on irradiated conditions.
These results suggest that improvement of hydrogen absorption rate for LaNi4.6Al0.4 surface is caused by formation of conductive oxide layer by ion beam irradiations [3]. The ion beam irradiation was found as an effective way to enhance the rate of the initial activation of the hydrogen absorption of La-Ni based alloy.
[1] H. Abe, H. Uchida, Y. Azuma, A. Uedono, Z. Q. Chen and H. Itoh, Nucl. Inst. and Meth B, 206 (2003) p. 224.
[2] H. Abe, R. Morimoto, F. Satoh, Y. Azuma and H. Uchida, J. Alloys Comp., 404-406 (2005) p. 288.
[3] H. H. Uchida, Y. Watanabe, Y. Matsumura and H. Uchida, J. Alloys Comp., 231 (1995) p. 679.
Author(s) affiliation:
Hiroshi Abe*, Semiconductor Analysis and Radiation Effects Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Japan
Syun Ohnuki, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Yoshiaki Shinohara, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Kadek Fendy Sutrisna, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Michiaki Utsumi, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Yoshihito Matsumura, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Takeshi Ohshima, Semiconductor Analysis and Radiation Effects Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Japan
*presenting author
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Syun Ohnuki, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Yoshiaki Shinohara, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Kadek Fendy Sutrisna, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Michiaki Utsumi, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Yoshihito Matsumura, Department of Applied Science, Graduate School of Engineering, Tokai University, Japan
Takeshi Ohshima, Semiconductor Analysis and Radiation Effects Group, Quantum Beam Science Directorate, Japan Atomic Energy Agency, Japan
*presenting author