When Mn is introduced in InP by ion implantation at peak concentrations close to 5 at. %, an annealing procedure at temperature higher than 600 °C forces most of the Mn atoms to diffuse at the surface of the samples due to a very low solubility of Mn in InP.

But for producing a diluted magnetic semiconductor based on InP it is highly desirable to obtain a homogeneous material with Mn atoms incorporated in the InP lattice (Mn is a p type impurity and substitutes for In when introduced in InP).

One way to reduce the segregation of Mn at the surface is by doing a co-implantation of P and Mn. The supplementary P could create In vacancies that will trap the Mn atoms during annealing.

Herein we show that co-implantation of Mn and P is indeed effective in reducing the diffusion of Mn to the surface. However our structural (TEM, RBS)) chemical (SIMS) and magnetic (SQUID) measurements indicate that there is a maximum concentration of Mn of 1 at. % that can be incorporated in InP. When the Mn concentration exceeds this limit, MnP ferromagnetic particles form inside the InP.

We will also show some studies concerning a possible dependence of the Mn profile in InP after annealing, upon the implantation order of Mn and P.