Transmission electron microscopy (TEM) allows the internal microstructure of materials to be imaged at a resolution not offered by any other experimental technique. By combining TEM with in situ ion irradiation it is possible to follow the dynamic effects of radiation rather than merely observing end states as in ex situ studies. Furthermore, parameters such as temperature, sample region and imaging conditions can be maintained throughout an experiment. This provides a powerful tool for developing fundamental understanding of the effects of irradiation at an atomistic scale – both at the level of single ion impacts and high doses.

 

We have recently constructed such a facility at the University of Salford. It has the ability to implant light ions such as He at the low energies required to stop within the thickness of a TEM sample or heavy/self ions to cause large numbers of atomic displacements. Being one of only around eleven TEMs with in situ ion irradiation around the world, this combination of ion accelerating voltage from 1 to 100 kV and species from H to Xe makes this installation unique.

 

The design and technical specifications of this new instrument will be presented. To illustrate the capabilities of the facility, experimental results on several materials systems will also be given including applications to nuclear materials. Other work to be presented will include irradiation of Si exploring the differing effects on mono and polycrystalline material.

Jonathan A Hinks*, University of Salford, United Kingdom
Jaap A van den Berg, University of Salford, United Kingdom
Stephen E Donnelly, University of Salford, United Kingdom

*presenting author