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Micro-Raman, AFM and MFM studies of ferromagnetic clusters formed in GaAs by Mn implantation
Oksana Yastrubchak, Jerzy Żuk*, Mirosław Kulik, and Marcin Turek
poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Nanostructure synthesis and modification
Last modified: 2010-06-25
Abstract
Incorporation of transition metal such as Mn into host III-V semiconductor compounds exhibits ferromagnetism and opens the possibility of applications in spin-dependent semiconductor-magnetic hybrid devices, in which the electronic transport is controlled by both charges and spins of the carriers.
In this work, Mn ions with energies 80 and 120 keV, and fluences ranging from 1014 to 1016cm-2 have been implanted into semiinsulating (001) GaAs. Mn concentration profiles were calculated using the transport of ions in matter (TRIM) simulation code. The GaAs substrates were maintained during the implantations at the temperatures: 250, 350 and 450°C.
The micro-Raman scattering have been used to study the evolution of the host lattice recrystallization in Mn+-implanted GaAs depending on the annealing temperature. The topography of the samples surface was probed by the atomic force microscopy (AFM). Magnetic Force Microscopy (MFM) was used for revealing of the magnetism in the implanted samples.
The micro-Raman data showed that the crystallinity of the host lattice is improved in all implanted GaAs samples. The active phonon mode in the frequency range 180 – 200 cm-1 observed in the Raman spectra is attributed to the As-based clusters. AFM and MFM data have proved the magnetic properties of the clusters at room temperature. Therefore we can conclude that these clusters contain Mn atoms. Depth profiling of the micro-Raman cluster line indicates the diffusion of the Mn-As atoms towards the samples surface due to the annealing. Thus at the highest temperature of 450°C the MnAs clusters of the ferromagnetic character are formed at the sample surface.
In this work, Mn ions with energies 80 and 120 keV, and fluences ranging from 1014 to 1016cm-2 have been implanted into semiinsulating (001) GaAs. Mn concentration profiles were calculated using the transport of ions in matter (TRIM) simulation code. The GaAs substrates were maintained during the implantations at the temperatures: 250, 350 and 450°C.
The micro-Raman scattering have been used to study the evolution of the host lattice recrystallization in Mn+-implanted GaAs depending on the annealing temperature. The topography of the samples surface was probed by the atomic force microscopy (AFM). Magnetic Force Microscopy (MFM) was used for revealing of the magnetism in the implanted samples.
The micro-Raman data showed that the crystallinity of the host lattice is improved in all implanted GaAs samples. The active phonon mode in the frequency range 180 – 200 cm-1 observed in the Raman spectra is attributed to the As-based clusters. AFM and MFM data have proved the magnetic properties of the clusters at room temperature. Therefore we can conclude that these clusters contain Mn atoms. Depth profiling of the micro-Raman cluster line indicates the diffusion of the Mn-As atoms towards the samples surface due to the annealing. Thus at the highest temperature of 450°C the MnAs clusters of the ferromagnetic character are formed at the sample surface.
Author(s) affiliation:
Oksana Yastrubchak, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Jerzy Żuk*, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Mirosław Kulik, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Marcin Turek, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
*presenting author
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Jerzy Żuk*, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Mirosław Kulik, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
Marcin Turek, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland
*presenting author