The results of investigations of photoluminescence (PL), Raman scattering and FTIR-spectra of the a-Si(a-SiO_x)/high-k-oxide (ZrO₂ or Al₂O₃) multilayered (up to 70 layers) nanoperiodic (5-20 nm) structures (MNSs) prepared by vacuum evaporation and ion-doped by P⁺ and B⁺ with doses 3·10¹³- 3·10¹⁷ cm^-2 are reported. The high-temperature annealing (HTA) at 1000-1100 °C results in formation of Si NCs with sizes 3-5 nm. Raman scattering of the annealed MNSs gives evidence that sizes of Si NCs, which are responsible for visible PL band, depend on thickness of the silicon-contained layer. In comparison with PL of NC in the Si/SiO₂ MNSs prepared at same conditions, PL intensity was 10-50 times smaller. The influence of kind of oxide layer material on MNS PL intensity and spectrum is discussed from the view point of chemical interactions which lead to the formation of intermediate silicate layers at heteroboundaries of the nanostructure.

Implantation of boron and phosphorus ions and followed HTA results in quenching or enhancement of different PL bands. Post-hydrogenation gives rise to enhancement of PL band (~500 nm) caused by radiative defects and/or small Si NCs, and of 750-850 nm band associated with (3-5 nm)-NCs of Si, as well.

Support through the Federal Targeted Programme “Scientific and pedagogical cadres of innovative Russia”, grant of the RF President (MK-185.2009.2) and RFBR project (10-02-00995) is gratefully acknowledged.

 

Alexey V. Ershov, N.I.Lobachevsky State University of Nizhni Novgorod, Russian Federation
Ivan A. Chugrov, N.I.Lobachevsky State University of Nizhni Novgorod, Russian Federation
Andrew A. Ershov, N.I.Lobachevsky State University of Nizhni Novgorod, Russian Federation
Alexey N. Mikhaylov, N.I.Lobachevsky State University of Nizhni Novgorod, Russian Federation
David I. Tetelbaum*, N.I.Lobachevsky State University of Nizhni Novgorod, Russian Federation

*presenting author