Semiconductor and metal nanoclusters in dielectrics have a great importance for current optoelectronics, particularly for fiber-optics communication and integrated circuit interconnects, solar cells, etc. Mixed ensembles of both types of particles embedded into one and the same dielectric matrix that may also contain rare earth elements (Er, which emit light at the communication wavelength 1.54 µm) are the most promising systems. In this work, such systems were ion-beam-synthesized in SiO₂, Al₂O₃ and ZrO₂(Y) matrices. Si⁺ ions were implanted at 100 keV and doses 5·10¹⁶-3·10¹⁷ cm^-2. Au and Ag with an average ion charge 2.1 were implanted in pulse mode at 60-80 keV (5·10¹⁵-1.2·10¹⁷ cm^-2). The matrix nature is found to have considerable effect on the formation process and properties of the nanoclusters. Si⁺ implantation into single-crystal Al₂O₃ (sapphire) leads to formation of Si nanocrystals that emit light only after annealing in oxidizing atmosphere. Au and Ag implanted into SiO₂ and Al₂O₃ form nanoclusters even without annealing and their concentration increases with dose and annealing temperature. Due to a high vacancy concentration and oxygen mobility, the situation for the ZrO₂(Y) is more complicated: Au precipitation competes with formation of Zr nanoclusters; the latter disappear at annealing in air. The current-voltage characteristics of the Au-implanted ZrO₂(Y) thin films have a series of maxima associated with resonance tunneling. Phenomena of energy exchange between metal, semiconductor nanoclusters and rare-earth centers in dielectric matrix are considered.

Support through the Federal Targeted Programme "Scientific and pedagogical cadres of innovative Russia", grant of the RF President (MK-185.2009.2) and RFBR project (10-02-00995) is gratefully acknowledged.