Progressive semiconductor device scaling in each technology node requires the formation of shallower junctions and thus lower energy implants. Current density limitation associated with extracting and transporting low energy beams result in low beam currents that in turn adversy affect the process throughput. It has been proposed to implant clusters of boron atoms. In this way the implanted dose rate will be large and the problems associated with low energy beam transport will be less significant. In ITEP a joint research and development program of steady state intense boron ion source for hundreds of electron-volt ion implanters has been in progress in framework of IPP THRUST II grant. The Bernas ion source with directly heated cathode and cooled discharge chamber is investigated for decaborane (B10H14) and carborane (C2 B10H12) ion beam production. The results of such ion beam generation are presented. As well the transport line for low energy beam transportation is presented. The result of carborane ion beam implantation into silicon wafer obtained by secondary mass spectrometry is presented also.

Dmitry Seleznev*, ITEP, Russian Federation
Pavel Yakushin, ITEP, Russian Federation
Timur Kulevoy, ITEP, Russian Federation
Genadey Kropachev, ITEP, Russian Federation
Aleksandr Kozlov, ITEP, Russian Federation
Rostislav Kuibeda, ITEP, Russian Federation
Viktor Koshelev, ITEP, Russian Federation
Ady Hershcovitch, BNL, United States
Brant Jonson, BNL, United States
Joe Poole, PVI, United States
Oleg Alexeyenko, SRICTOC, Russian Federation
Efim Oks, HCEI, Russian Federation
Vasiliy Gushenets, HCEI, Russian Federation

*presenting author