Annealing of hydrogen implanted silicon results in the formation of hydrogen-induced defects, i.e, H-platelets. In this report, we have compared the influences of dynamic annealing and thermal annealing on hydrogen-induced defect formation by using transmission electron microscopy, ion channeling, elastic recoil detection, and infrared spectroscopy.  The dynamic annealing occurring during high temperature (300 C) hydrogen implantation leads to the formation of H platelets in high concentration and distributed into a broad region close to the distribution of implantation damage. Two types of H platelets, i.e., (100) and (111) platelets, with similar density, are observed in the damage band.   However, the nucleation and growth of H-platelets are remarkably different when dynamic annealing is replaced by thermal annealing. In Si implanted with hydrogen at cryogenic temperature (-190 C) and subsequently annealed at 300 C, only a low concentration of (100) type platelets are formed and confined in a narrow band. For Si implanted with hydrogen at room temperature and subsequently annealed at 300 C, the band of platelets widens  and H platelets are mainly formed with habit planes lying on the (100) plane, and sparse (111) H platelets are observed near the back interface of the band. These findings can be interpreted in terms of the H platelet formation mechanism which involves the interaction of implanted hydrogen with implantation defects, and they reveal that dynamic annealing is more efficient in accelerating H platelet formation than purely thermal annealing.