Ultra-shallow junctions in semiconductors are mainly produced by ion implantation. The final depth distribution of the implanted ions can be either predicted by theoretical models or measured by experimental methods. However, the latter often struggle with different effects such as the transient region, and also with the quantification or sensibility issues. The presented high-resolution grazing emission x-ray fluorescence (GEXRF) method, where the X-ray fluorescence intensity is measured as a function of the grazing exit angle, allows avoiding these difficulties and permits to determine the depth distribution of implanted ions with a nanometer-resolution. The measurements were performed at the ID21 beamline of the ESRF with the von Hamos Bragg type bent crystal spectrometer of Fribourg [1]. We have investigated the depth profiling capabilities of our method for the case of Al implanted in Si with energies ranging between 1 and 100 keV at doses of 1E16 atoms/cm2. The comparison of our results [2] to TRIM calculations reveals a good agreement between the experimental and the theoretical profiles.

[1] J. Hoszowska et al., Nucl. Instrum. Methods Phys. Res. A 376 (1996) 129.
[2] Y. Kayser et al., Spectrochim. Acta B (2010), doi: 10.1016/j.sab.2010.02.013.

Yves Kayser*, Université de Fribourg, Switzerland
Dariusz Banaś, Jan Kochanowski University, Poland
Wei Cao, Université de Fribourg, Switzerland
Jean-Claude Dousse, Université de Fribourg, Switzerland
Joanna Hoszowska, Université de Fribourg, Switzerland
Pavel Jagodziński, Kielce University of Technology, Poland
Matjaz Kavcic, Josef Stefan Institute, Slovenia
Aldona Kubala-Kukuś, Jan Kochanowski University, Poland
Stanislaw Nowak, Université de Fribourg, Switzerland
Marek Pajek, Jan Kochanowki University, Poland
Jakub Szlachetko, European Synchrotron Radiation Facility, France

*presenting author