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Structural and optical properties of transition metal implanted nanocrystalline CdS thin films at different temperatures
Chandramohan Samygounder, Aloke Kanjilal, Sachindra Nath Sarangi, Subrata Majumder, Sathyamoorthy Ramakrishnan, Hong Chang-Hee, and Tapobrata Som*
poster presentation: Tuesday 2010-08-24 05:00 PM - 07:00 PM in section Modification of semiconductors, metals and ceramics
Last modified: 2010-06-02
Abstract
Doped semiconductors are of great practical interest in view of the fact that it offers new functionalities desirable for the production of high-performance devices. Of particular concern is the transition metal doped semiconductors because they offer the possibility to integrate electrical, optical, and magnetic properties into a single material. Doping by means of ion implantation is a versatile approach to maneuvering the properties in a highly controlled manner. In this communication, we address modifications in structural, morphological, and optical properties of nanocrystalline CdS thin films caused by 90 keV Fe+ and Ni+ implantation as a function of ion fluence (0.1-3.6×1016 ions cm-2). Implantations were carried out at an elevated temperature of 573 K in order to avoid amorphization and to enhance the solubility of impurity atoms in the CdS lattice. Films were characterized by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), optical absorption, photoluminescence (PL), and micro-Raman spectroscopy. Transition metal doping does not induce any secondary phase formation but stimulates structural disorder independent of substrate temperature. Due to the small dimensionality of nanometer sized grains in CdS films, the spread in energy loss during implantation gets restricted to confine within small regions, leading to agglomeration of grains. Implantation at 573 K is found to improve the crystalline quality of the samples and leads to supersaturation of impurity ions in the CdS lattice. GAXRD and PL studies show that the implanted ions are likely to occupy the cationic sites in the CdS lattice.
Author(s) affiliation:
Chandramohan Samygounder, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
Aloke Kanjilal, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, 01328 Dresden, Germany
Sachindra Nath Sarangi, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
Subrata Majumder, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
Sathyamoorthy Ramakrishnan, Department of Physics, Kongunadu Arts & Science College, Coimbatore 641 029, India
Hong Chang-Hee, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
Tapobrata Som*, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
*presenting author
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Aloke Kanjilal, Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, 01328 Dresden, Germany
Sachindra Nath Sarangi, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
Subrata Majumder, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
Sathyamoorthy Ramakrishnan, Department of Physics, Kongunadu Arts & Science College, Coimbatore 641 029, India
Hong Chang-Hee, School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
Tapobrata Som*, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
*presenting author