SiC epilayers grown on 4H-SiC single crystals were implanted at 450ºC with 850 keV Ni⁺ or Co⁺ ions with fluences in the 1-9×10¹⁶ Ni/cm² and 0.5-2×10¹⁶ Co/cm² ranges, respectively. A post-implantation annealing was performed in N₂ at 1100ºC in order to recuperate the crystal quality of the samples. The structural disorder and the lattice site location of Ni and Co ions have been studied by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.45 MeV He²⁺ beam along the and axes. It is observed that, after the annealing, the crystal lattice partially recovers and some of the implanted ions become aligned along the axis. Moreover, the primary disorder is not due to large interstitial clusters or amorphous domains, as they should be equally observable along both axes. These results can be of importance to understand the magnetic properties of the implanted samples, which would determine the suitability of this material for potential applications in spin-based electronics

Javier Garcia Lopez*, National Accelerator Centre. University of Seville, Spain
Yolanda Morilla, , 
Juan Carlos Cheang Wong, , 
Carlos Prieto, , 
Jorge Sanchez, , 
Gabor Battistig, , 
Zsolt Zolnai, , 
Jean-Louis Cantin, , 

*presenting author