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Tuning the emission properties of self-assembled InAs/InP(001) quantum dots
Carolyne Dion*, Martin Chicoine, François Schiettekatte, Patrick Desjardins, Philip J. Poole, and Sylvain Raymond
poster presentation: Tuesday 2010-08-24 05:00 PM - 07:00 PM in section Defect-induced modification of materials
Last modified: 2010-06-02
Abstract
We have investigated the effect of post-growth rapid thermal annealing (RTA) in conjunction with grown-in defects (GID) and shallow phosphorus implantation (IIMP) in fluence range of
5x1011-1014 cm-2 on the low temperature photoluminescence (PL) spectra of self-assembled InAs/InP QDs. In untreated samples, annealing temperature (Ta) threshold for noticeable modification in the PL spectra was found to be 725°C, while maximal PL blueshift of 90 meV without emission broadening was obtained after RTA at 800°C for 210 s. On the other hand, for IIMP and GID samples, Ta threshold for significant PL modification are 450 and 600°C, respectively. PL shift of up to 250 meV was obtained after annealing at 600 and 750°C respectively in IIMP and GID samples. The overall PL evolution under annealing was seen to be very distinctive for GID and IIMP samples. Indeed, the overall QD PL spectra from GID samples exhibited a progressive blueshift without broadening, while PL spectra from IIMP samples revealed the co-existence of intact QD PL and a broad PL feature related to heavily intermixed QDs, suggesting spatial inhomogeneity in the compositional intermixing. In order to better understand these intermixing mechanisms, samples capped with a stack of compressively strained In0.75Ga0.25As/InP quantum wells (QWs) were prepared to trap vacancies released by the implantation damage, while not inhibiting the effect of the interstitials. Ion-implantation-induced intermixing of these samples revealed progressive PL blueshift without broadening, such as in GID-induced intermixing. These results thus allow us to attribute the ion-implantation-induced intermixing to the motion of vacancies emanating from implantation damage and GID-mediated-intermixing to phosphorus interstitials.
5x1011-1014 cm-2 on the low temperature photoluminescence (PL) spectra of self-assembled InAs/InP QDs. In untreated samples, annealing temperature (Ta) threshold for noticeable modification in the PL spectra was found to be 725°C, while maximal PL blueshift of 90 meV without emission broadening was obtained after RTA at 800°C for 210 s. On the other hand, for IIMP and GID samples, Ta threshold for significant PL modification are 450 and 600°C, respectively. PL shift of up to 250 meV was obtained after annealing at 600 and 750°C respectively in IIMP and GID samples. The overall PL evolution under annealing was seen to be very distinctive for GID and IIMP samples. Indeed, the overall QD PL spectra from GID samples exhibited a progressive blueshift without broadening, while PL spectra from IIMP samples revealed the co-existence of intact QD PL and a broad PL feature related to heavily intermixed QDs, suggesting spatial inhomogeneity in the compositional intermixing. In order to better understand these intermixing mechanisms, samples capped with a stack of compressively strained In0.75Ga0.25As/InP quantum wells (QWs) were prepared to trap vacancies released by the implantation damage, while not inhibiting the effect of the interstitials. Ion-implantation-induced intermixing of these samples revealed progressive PL blueshift without broadening, such as in GID-induced intermixing. These results thus allow us to attribute the ion-implantation-induced intermixing to the motion of vacancies emanating from implantation damage and GID-mediated-intermixing to phosphorus interstitials.
Author(s) affiliation:
Carolyne Dion*, INRS, Canada
Martin Chicoine, Université de Montréal, Canada
François Schiettekatte, Université de Montréal, Canada
Patrick Desjardins, École Polytechnique de Montréa, Canada
Philip J. Poole, Institut des Sciences des Microstructures, Conseil National de Recherches du Canada, Canada
Sylvain Raymond, Institut des Sciences des Microstructures, Conseil National de Recherches du Canada, Canada
*presenting author
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Martin Chicoine, Université de Montréal, Canada
François Schiettekatte, Université de Montréal, Canada
Patrick Desjardins, École Polytechnique de Montréa, Canada
Philip J. Poole, Institut des Sciences des Microstructures, Conseil National de Recherches du Canada, Canada
Sylvain Raymond, Institut des Sciences des Microstructures, Conseil National de Recherches du Canada, Canada
*presenting author