Application of stress is efficient to improve carrier mobilities in semiconductors. As an example, we have previously shown that He⁺ ion implantation and annealing of pseudomorphic Si/SiGe/Si(100) can be successfully used to relax the strain of the SiGe layer by formation of a misfit dislocation array and at the same time to induce strain in the Si top layer by strain transfer.  Due to the symmetry of the (100) surface, layers on Si(100) generally exhibit a biaxial strain state. Uniaxial strain can only be formed by a reduction of the symmetry, e.g. by patterning  lines along  using standard optical lithography and etching. Strain relaxation was observed to be strongly dependent on the directions. In contrast, SiGe layers grown on Si(110) have already a reduced symmetry due to the crystal structure and show uniaxial strain relaxation since misfit dislocations form only along one direction. We will show that He ion channeling is capable to measure the strain components in uniaxially strained SiGe by recording angular yield scans. We developed a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic (cubic) crystal.