To study ion beam modifications into MOCVD grown wurtzite AlInN/GaN hetrostructures, neon ions were implanted with dose ranging from 10¹⁴ to 9x10¹⁵ ions/cm2. Structural characterization was carried out by X-ray diffraction and Rutherford backscattering spectroscopy (RBS). XRD analysis revealed that GaN related peak for all samples lies at its usual Bragg position of 2θ=34.56^o whereas a shift in AlInN peak taken place from its position of 2θ=35.51^o for as-grown sample. RBS analysis provided interesting results with clear shift in position of indium related peak pointing to migration of indium atoms towards interface of hetrostructures. Moreover this peak has observed to be splitted into two peaks which is indication of depth wise re-distribution of indium atoms within the material. Keywords: Implantation; defects; III-nitrides.

Abdul Majid*, University of Gujrat, Pakistan., Pakistan

*presenting author