The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω·cm by proton doping at the fluence rate and fluence of 4×10¹¹ ions/cm²/s and 1×10¹⁵ ions/cm², respectively.  The resistivity increased with the increasing fluence rate of the protons.  FT/IR spectra have shown that a new band resulted from the appearance of N⁺-H due to the proton implantation.

Seiko Nakagawa*, Tokyo Metropolitan Industrial Technology Research Institute, Japan
Nobuaki Ohta, Hiroshima University, Japan

*presenting author