Depth Profiling is the most widespread technique to assess the elemental distribution of components in the target from its surface to a depth of several micrometers. However, the chemical composition near the interfaces in multilayerd samples is often modified during ion-beam etching by ion-beam induced miuxing effects, so that obtaining reliable depth distibtuions that represent the original undisturbed matrix is a significant challenge. As an example, a mulilayerd NbOx/TiW sample has been used to test the sputter beam effects during routine depth profiling with both SIMS and AES techniques. The results showed significant effect of the type and energy of the sputter ions on the depth profiles of emitted secondary ions, the effect being different on metal ion yields of Nb, Ti and W from the distribution of oxygen ion yield.

dimitre s karpuzov*, University of Alberta, Canada

*presenting author