In-situ TEM studies of materials under ion beams: JANNuS dual beam TEM
Erwan Oliviero*, Cyril Bachelet, Odile Kaitasov, Franck Fortuna, Brigitte Decamps, and Marie-odile Ruault
poster presentation: Tuesday 2010-08-24 05:00 PM - 07:00 PM in section General Papers
Last modified: 2010-06-02
Abstract
The JANNuS-Orsay facility is a new platform open to the international scientific community that includes an in-situ transmission electron microscope (TEM) coupled to two ion accelerators (Fig.1). This set-up allows the direct observation of the internal microstructure of materials at the nanoscale while they are being subjected to bombardment with energetic particles. Its main strength and originality is the ability to supply a large range of ion irradiation and implantation conditions (many elements, energy range 5 keV – 4 MeV), allowing in-situ ion implantation/irradiation transmission electron microscopy with single, dual or triple beam (2 ions beams and electron beam). Moreover, the TEM analytical equipment (EDX, STEM, HAADF and GIF) associated with a large range of specimen holders (nitrogen cooling, heating up to 1300°C, specially designed traction-heating), offer a large potential to simultaneously study structural and chemical modifications induced by ion implantation/irradiation. The correlation of quantitative chemical information and microstructural information at the nanoscale can provide insights into the mechanisms governing material behaviour under ion beams (e.g. phase transition and segregation; atomic/layer mixing and chemical disorder; compositional changes; grain growth and shrinkage; precipitation and dissolution; defect/bubble formation and growth; diffusion…etc). The experimental results thus obtained can be compared with theoretical results obtained by computational modeling. This help to validate different theoretical models or vice versa to better understand the phenomena observed in the microscope. After one year of operation, the main scientific results will be presented, as for example synergy effects in Co disilicide nucleation in Si under simultaneous Co implantation and high-energy Si ions irradiation.
Author(s) affiliation:
Erwan Oliviero*, CSNSM CNRS Université Paris-Sud, France
Cyril Bachelet, CSNSM CNRS Université Paris-Sud, France
Odile Kaitasov, CSNSM CNRS Université Paris-Sud, France
Franck Fortuna, CSNSM CNRS Université Paris-Sud, France
Brigitte Decamps, CSNSM CNRS Université Paris-Sud,
Marie-odile Ruault, CSNSM CNRS Université Paris-Sud,
*presenting author
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Cyril Bachelet, CSNSM CNRS Université Paris-Sud, France
Odile Kaitasov, CSNSM CNRS Université Paris-Sud, France
Franck Fortuna, CSNSM CNRS Université Paris-Sud, France
Brigitte Decamps, CSNSM CNRS Université Paris-Sud,
Marie-odile Ruault, CSNSM CNRS Université Paris-Sud,
*presenting author