17th International Conference on Ion Beam Modification of Materials

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Efficient Ions Generating Methods and Sources for Deep and Shallow Implantation

Ady Hershcovitch*

poster presentation: 2010-08-23 09:30 AM – 09:50 AM
Last modified: 2010-08-11


For the past 10 years a joint R&D effort whose ultimate goal is to develop efficient intense ion beams to meet needs of the two-energy extremes of MeV’s and 100’s of eV ion implanters has been in progress to replace existing low charge state ion sources in combination with rf accelerators with high charge state ion sources on a low energy dc platform to generate high-energy ion beams for implantation. Low energy ion implantation is performed presently by decelerating high-energy extracted ions. Consequently, output currents are low due to space charge problems. Contamination is also a problem due to gases and plasmas employed to mitigate space charge issues. Our efforts involve molecular ions, single species plasma immersion, and a novel plasmaless/gasless deceleration method. Although R&D predominantly focused on semiconductor ion implantation, intense high charge state metallic ion beams were generated as well. This endeavor has already resulted in record steady state output currents of higher charge state ions: P2+ (8.6 pmA), P3+ (1.9 pmA), and P4+ (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb3+ Sb4+, Sb5+, and Sb6+ respectively. Ten’s of mA of Pb7+, Bi8+, U9+, as well as 3 emA of positive Decaborane ion beams were extracted at 10 keV and a somewhat smaller current of negative Decaborane. A program overview is to be presented in this paper; specifics are to be described in accompanying papers.

Author(s) affiliation:
Ady Hershcovitch*, Brookhaven National Laboratory, United States

*presenting author
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