17th International Conference on Ion Beam Modification of Materials

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Swift Heavy Ion Irradiation on Single - Walled Carbon Nanotube High Density Capacitors for Decoupling Applications

KUMARESAN PARASURAMAN*

poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Cluster ions, single ion, swift heavy ions, highly charged ions
Last modified: 2010-06-02

Abstract


We propose a novel capacitor, single walled carbon nanotube capacitor (SWCNCAP), consisting of multiple layer of interleaved CNTs, alternately connected to the cathode and anode. Each SWCNT electrode is surrounded by four SWCNTs connected to the opposing electrode. The proposed SWCNCAP can provide a very high capacitance/ are in excess of 1pf/µm2. This is two orders of magnitude greater than the international technology roadmap for semiconductors ITRS projected capability 11fF/ µm2 of MOS decoupling capacitor devices in the year 2020.

The chemicals used for the synthesis of Al-MCM-41 with various Si/Al ratio: 36, 57, 81 and 108 were sodium metasilicate (Na2SiO3 .5H2O), aluminium sulphate (Al2(SO4)3.18H2O), cetyltrimethyl ammonium bromide (C16H33(CH3)3N+Br-), and sulfuric acid (H2SO4). Ion irradiation of CNTs to modify both the defect morphology and concentration in a well-controlled manner provides a unique approach to study structural modifications in CNTs, especially as they relate to hydrogen absorption. The first objective of our research was to measure the depth profile of the hydrogen to see if standard techniques for predicting the range and distributions of the hydrogen could be applied to SWNTs. The stability of SWCNTs under ion irradiation is an important parameter for the performance of CNT devices under extreme conditions of heat, radiation, etc. In order to investigate the stability and the evolution of nature of bonding, multiwalled carbon nanotubes were irradiated using 21 keV Ag_  ions with fluences of    1 X 1013, 5 X1013, 7 X1013 and 1 X 1014 ions/cm2.

The samples were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. We compared the capacitance per unit area of our SWCNCAP and the projected future capability for MOS capacitor. In 2018, MOS capacitors are expected to exhibit a capacitance per unit area of 11fF/ µm2. For a SWCNCAP with 200 layers of interleaved CNTs, a capacitance per unit area of 1160-2710 11fF/ µm2 can be achieved. Varying the number of interleaved SWCNTs layers would linearly change the capacitance per unit area.


Author(s) affiliation:
KUMARESAN PARASURAMAN*, ARIGNAR ANNA GOVERNMENT ARTS COLLEGE, CHEYYER, India

*presenting author
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