The optical diffraction method for fast measurement of current temperature and dynamic of recrystallization on the surface of implanted silicon at light pulse irradiation was suggest and realized.

On the sample surface two adjacent grating were formed: the amplitude grating with period of 50 μm and the phase grating with period of 4 μm. The phase grating is temperature sensor of the sample. The amplitude grating the structural-phase changes is used.

The current silicon temperature was determined by measuring the varying diffraction angle of the probing laser beam. The diffraction angle was varied over time because the period of the diffraction grating increased as a result of the dynamic thermal expansion of the crystal. The measured signal was recorded in the pair of symmetric fifth-order diffraction maxima.

The amplitude grating was formed by implantation with phosphorous ions by photolithography method. As a result of implantation, on the silicon surface amorphous cells (R_а=0.45 for λ=0.6328 μm)  with size 40×40 μm enclosed by a net of single-crystal  silicon were formed (R_c=0.37 for λ=0.6328 μm).  The recrystallization of amorphous cells during pulse light heating changes the diffraction efficiency of grating. To register the diffraction efficiency the intensity change of first diffraction maximum was recorded.

Single-crystal silicon plates KDB-1 with (100) orientation and 400 μm thickness were chosen as a semiconductor substrate. The radiation beam of a He–Ne laser with
λ =0.6328 μm was used as the probing beam. The pulsed heating of silicon samples was performed on a UOL.P-1 setup.

Bulat Fasimovich Farrakhov*, Kazan Physical Technical Institute of the Russian Academy of Sciences, Russian Federation
Yakh'ya Valievich Fattakhov, Kazan Physical Technical Institute of the Russian Academy of Sciences, Russian Federation
Mansur Falyakhutdinovich Galyautdinov, Kazan Physical Technical Institute of the Russian Academy of Sciences, Russian Federation

*presenting author