Thin Film Deposition and Material Amorphization Using Dense Plasma Focus
poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Focused ion beams, ion lithography
Last modified: 2010-06-14
Abstract
It is worthwhile to mention that the dense plasma focus (DPF) devices having energy ranges from a few kJ to MJ generate ions with energy more than few hundred of keV to tens of MeV and also is a source of relativistic electrons, X-rays and neutrons. Amorphization of crystalline silicon is achieved by irradiation of energetic ions generated by the dense plasma focus. Amorphous silicon (a-Si) film was deposited on the substrate by different focus shot. Deposited films have been characterized for their structure by X-ray diffraction (XRD).Amorphous silicon exhibits more plasticity as compared to c-Si, and improved mechanical and tribological properties. Deposition technique seems is more favorable for amorphization than the surface technique.
Author(s) affiliation:
Z. P. Wang, Department of Electric and Electronic Systems, Faculty of Engineering, University of Toyama, Japan
H. Ito, Department of Electric and Electronic Systems, Faculty of Engineering, University of Toyama, Japan
K. Masugata, Department of Electric and Electronic Systems, Faculty of Engineering, University of Toyama,
*presenting author