17th International Conference on Ion Beam Modification of Materials

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Micro and nano fabrication with extremely low energy cluster beams

Jiro Matsuo*, Toshio Seki, and Takaaki Aoki

poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Cluster ions, single ion, swift heavy ions, highly charged ions
Last modified: 2010-06-02

Abstract


Because of their superior characteristics for material processing, energetic cluster beams have been utilized for shallow junction formation, thin film formation, surface smoothing and etching. Recently, we have demonstrated extremely high-speed etching of silicon using hyper-thermal ClF3 cluster beam. Etching rates of several tens of mm per minute, much higher than conventional reactive ion etching (RIE), were obtained. Molecular dynamics (MD) simulation reveals that high temperature and pressure at the impact zone, resulting from multiple collisions of incident energetic ClF3 cluster, enhance the dissociation of ClF3 and the reaction to form volatile products, such as SiFx. Furthermore, a cluster beam is highly directional, because it is generated with adiabatic expansion. Consequently, a deep trench of 1 mm width was fabricated with photoresist mask. In addition, the etching selectivity of photoresist to silicon is infinite, because of the extremely low incident energy. This simple energetic cluster beam process could be suitable for deep and high-speed etching used for 3D integration of LSIs and microelectronic mechanical system (MEMS) devices.

Recent progress in this novel technique will be presented and discussed in view of its application in micro and nano fabrication.


Author(s) affiliation:
Jiro Matsuo*, Quantum Science and Engineering Center, Kyoto University, Japan
Toshio Seki, Department of Nuclear Engineering, Kyoto University, Japan
Takaaki Aoki, Electronic Science and Engineering, Kyoto University, Japan

*presenting author
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