We report on the selective reduction of AlN host lattice defect cathodoluminescence by high dose ion implantation of light elements such as fluorine, chlorine and neon with varying peak concentration up to a few atom percent. In order to distinguish between luminescence suppression in the visible to luminescence quenching due to radiation damage, all samples were additionally implanted with europium at fluences of 1∙10¹³ions/cm².  Our investigations reveal that different light ion species have different influence on the defect luminescence of the AlN host lattice which is likely due to selective passivation of these defects. The best ratio of defect luminescence suppression to radiation damage induced luminescence quenching is achieved in the case of fluorine co-doping. Additionally to optical investigations we present electrical conductivity measurements of the implanted samples with a special focus on fluorine as well.