17th International Conference on Ion Beam Modification of Materials

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Technique of local changes in chemical composition and properties of materials by means of ion beams irradiation

Boris Aronovich Gurovich, Kirill Evgenievich Prikhodko*, and Evgenia Anatolievna Kuleshova

oral presentation: 2010-08-25 11:00 AM – 11:20 AM
Last modified: 2010-06-19


The paper describes a technique to create composite nanostructures from metals, semiconductors and insulators by means of ion beams irradiation. The technique is implemented in three ways: selective removal of atoms (SRA)– to produce metals and semiconductors from insulators; the selective displacement of atoms (SDA) – to change the atomic composition; the selective association of atoms (SAA) – to produce insulators from metals and semiconductors.

The main factor ensuring the SRA process is radiation damage of materials. It was shown that under certain conditions ion irradiation may lead to complete removal of one type of atoms from the irradiated volume of a substance for the depth of projected range of the ions. In the cases of SDA and SAA, the technique of forming a composite structure includes the simultaneous irradiation on substrate selected parts of the two ion beams. The first beam consists of H ions with sufficient energy to remove one type of atoms from substrate (SDA) or produce radiation defects in the substrate (SAA). The second beam is formed from ions with high affinity to the remaining substrate atoms. This leads to the replacement of the selected type of atoms in the original substance into atoms, which form the second beam (SDA), or to connecting second beam atoms (SAA). Transformations can be done simultaneously in different layers using one mask to minimize the overlapping problem.

We have reached a structures resolution ~15nm for PMM (153Gb/in2), have fabricated the field-effect transistor and metal nano-wires in dielectric matrix. We have got the transformations: of oxides to metals and semiconductors (Cu, W, Co, Bi, Mo, Ta, Ge, etc.) by SRA; of nitrides to oxides (Si, Al, Ti, Ga) by SDA and of pure elements (Si, Al, Ti) to oxides by SAA.

Author(s) affiliation:
Boris Aronovich Gurovich, Russian Research Center "Kurchatov Institute", Russian Federation
Kirill Evgenievich Prikhodko*, Russian Research Center "Kurchatov Institute", Russian Federation
Evgenia Anatolievna Kuleshova, Russian Research Center "Kurchatov Institute", Russian Federation

*presenting author
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