17th International Conference on Ion Beam Modification of Materials

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Ion beam assisted fabrication of copper nanowires on semiconducting substarte and their characterization

Jaskiran Kaur*, Surinder Singh, Dinakar Kanjilal, and S K Chakarvarti

poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Nanostructure synthesis and modification
Last modified: 2010-06-02

Abstract


There are variety of possible applications based on nano structures include high-power microwave generation, ultra-fast computer and tera-hertz amplifier devices, radiation and temperature-insensitive electronics, field emitters, electrochemistry, conductive polymer nanofibres fabrication, transparent metal structures and macroscopic quantum tunneling phenomenon. Of the many possible geometrical shapes and growth patterns, the simplest structure is probably an ensemble of wires. Nanowires have attracted considerable attention because of their extraordinary physical properties and enormous potential for applications in numerous fields of research and technology. A variety of techniques like optical, X-ray, electron and ion beam lithography have been used for fabrication of such ensembles. However, electrochemical methods involving electro deposition of metals into the etched pores of nuclear track filters (NTFs) of mica and polymers are convenient and simple techniques.

In the present paper to prevent the post synthesis manipulations we have used this simple technique-involving track etched membranes as templates and electrodeposition, to synthesis nanowires on semiconducting substrates. For this polycarbonate layer is spin coated on the semiconducting substrate and then irradiated with 50 MeV Li+3 ions at a fluence of 8E7 ions/cm-2. For this the irradiation facility available at Inter University Accelerator Center, New Delhi was used. After irradiation the latent tracks were first sensitized by UV exposure and later etched by using 6N NaOH solution (at room temperature for 25 mins) leading to the formation of nano size pores.

Aqueous CuSO4.5H2O (200 g/l) + H2SO4 (20 g/l) was used as electrolyte. The electrodeposition in a specially designed cell was carried out potentiostatically for 12 min at 0.8 V (current 0.0137–0.0140 A) under room temperature (nearly 25 ± 2°C) and atmospheric pressure, with a pure copper sheet used as anode. After completion of electrodeposition, the electrolyte was drained out and the cathode flushed with 3% H2SO4, followed by Milli Q water rinsing and air-drying.

After depositing metal in these pores the polycarbonate templates is removed by dissolving it in dichloromethane. Leading to the formation of nanowires standing on the substrate itself. Using this technique we have studied VI characteristics and the field emission properties of copper nano wires grown on the Silicon and GaAs substrates. Further detailed analysis will be presented in the paper.


Author(s) affiliation:
Jaskiran Kaur*, GNDU Amritsar, India
Surinder Singh, GNDU Amritsar, India
Dinakar Kanjilal, IUACNew Delhi, India
S K Chakarvarti, MRIU Faridabad, India

*presenting author
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