17th International Conference on Ion Beam Modification of Materials

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KMC Simulation for nanocolumns formation in a MnxGe1-x Dilute Magnetic Semiconductor produced by ion implantation and pulsed-laser melting

Shu Zheng*, Xiaoping Yang, and Zhengxiong Wang

poster presentation: Monday 2010-08-23 05:00 PM - 07:00 PM in section Nanostructure synthesis and modification
Last modified: 2010-06-10

Abstract


 In semiconductor spintronics, many efforts have been devote to the synthesis of ferromagnetic semiconductors, ferromagnetism in dilute magnetic semiconductors (DMSs), including growth conditions and sample treatment. Especially the fabrication of high Curie temperature (Tc) DMS is one of the practical requirements.

Here the samples of MnxGe1-x Dilute Magnetic Semiconductors (DMS) are obtained by implantation of Mn+ ions into Ge substrate and subsequent annealing, producing implanted films with varying concentration profiles and temperatures. A characteristic self-organized Mn-rich nanocolumns surrounded by a fully compensated Ge matrix[1] is formed by experiments report. Using Kinetic Monte Carlo simulation, we study the morphological evolution of a MnxGe1-x film[2]  and show that the nanocolumns structure can be formed even for low concentrations and high Curie temperature which is in agreement with the recent experiment results[3]. The dependence of the nanocolumns formulation on the growth temperature, deposition rate and Mn-dopant concentration of DMS is also explored.

Supported by the National Basic Research Program of China(No. 2009GB105004).   

[1] M. Jamet, A.Barski, T. Devillers et al. Nature Mater. 5, 653 (2006)

[2] T. Fukushima, K. Sato, H.K. Yoshida et al. Jpn. J. Appl. Phys., Part 2 45, L416 (2006)

[3] A.P.Li, C.Zeng, K.van Benthem et al. Physical review B 75, 201201(R) (2007)

 


Author(s) affiliation:
Shu Zheng*, School of Physics and Optoelectronic Technology, Dalian University of Technology, China
Xiaoping Yang, School of Physics and Optoelectronic Technology, Dalian University of Technology, China
Zhengxiong Wang, School of Physics and Optoelectronic Technology, Dalian University of Technology, China

*presenting author
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