17th International Conference on Ion Beam Modification of Materials

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FIM OF NANOPORES IN THE SUBSURFACE VOLUME OF THE ION IMPLATED MATERIALS

Vladimir Alexsandrovich Ivchenko*

poster presentation: Tuesday 2010-08-24 05:00 PM - 07:00 PM in section Defect-induced modification of materials
Last modified: 2010-06-01

Abstract


In atom-spatial scale experimental studying of nanopore formation both on a surface, and in subsurface volume of various materials after an irradiation with energy up to 40 keV by particles Ar+ in nanometers range from the irradiated surface is spent. For study the defect structure the method of field ion microscopy (FIM) was used. The FIM method allows to analyzing the object of research in the bulk by controlled and sequential removal of surface atoms by an electric field at cryogenic temperatures.

Regimes of ion implantation at which nanopore formation begins are as a result defined. So for pure metals (Ir, Pt), nanopores arise at fluencies 1017 – 1018 ion/sm2 in a range energies 20-30 keV, since j=200 mА/sm2. Ion contrast of nanopores in the ordered alloys (Cu3Au) and solid solutions (50Pd30Cu20Ag) is found out, since current density ~ 300 mА/sm2. In the 50Pd30Cu20Ag solid solutions testing precipitation break-up with formation of the ordered matrix, depth of occurrence nanopores depends, both from fluency, and from ion current density of charged particles Ar. Ii was shown that the volume fraction of nanopores decreases monotonically with the depth of occurrence. A quantitative estimate of nanopore size was made.

For irradiated Pt (Е=30 keV, F=1017-1018 ion/sm2 and j=150 (Т=70°С) and 200 mА/sm2 (Т=200°С)) distribution and a nanopore volume fraction in subsurface volume of material is studied. It is as a result established that to 40 % of nanopores it is concentrated in subsurface layer in the thickness of 10 nm, further a nanopore volume fraction decreases on logarithmic dependence.

Work is executed with support of the Ural branch of the Russian Academy of Sciences (OFN program of RAS № 5 «Physics of new materials and structures»).


Author(s) affiliation:
Vladimir Alexsandrovich Ivchenko*, Institute of Electrophysics, Urals Division of Russian Academy of Sciences, Russian Federation

*presenting author
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