In this presentation we show data on the Coulomb heating induced by B₂ molecular beams channeling along the Si direction in a 800 to 2200 keV/atom energy interval. The simultaneous detection of Si-x rays and backscattering particles established the necessary grounds for the calculation of the Coulomb heating,i.e., the molecular transversal energy due to the Coulomb explosion tranfered to the target atoms. It is shown that the above energy is a function of the beam energy going from 9 eV for 800 keV/atom up to 17 e for 2200 keV/atom.By combining the prsent results with those previously obtained for H₂ and C₂ we were able to obtain two striking results. First, all the experimental values fall on a straight line when they are plotted as a function of the stored potential energy per ion, suggesting some kind of ``universal behavior´´. Second, the analysis of the whole experimental data shows that the Coulomb heating scales with 2/3 of the stored potential energy per atom, regardsless the ion atomic number. This last results is in agreement with theoretical predictions.